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| DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS DCR06C THRU DCR06F TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 300 to 600 Volts CURRENT - 0.6 Ampere Description * Driven directly with IC and MOS device * Feature proprietary, void-free glass passivated chips * Available in voltage ratings from 300 to 600 volts * Sensitive gate trigger current * Designed for high volume, line-powered control application in relay lamp drivers, small motor controls, gate drivers for large thyristors TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ o o Pinning 1 = Cathode, 2 = Gate, 3 = Anode 2 Typ Absolute Maximum Ratings(TA=25 Characteristic Peak Repetitive Off-State Voltage DCR06C DCR06D DCR06F o C) Rating 300 400 600 0.6 8 0.1 0.1 0.01 -40 to +110 -40 to +150 Unit V A A A W W o o Symbol VDRM IT(RMS) ITSM IGM PGM PG(AV) TJ TSTG .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .022(0.56) .014(0.36) .050 Typ (1.27) On-State RMS Current (TA=57oC, 180o Conduction Angles) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60Hz) Forward Peak Gate Current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Operating Junction Temperature Storage Temperature 321 .148(3.76) .132(3.36) .050 Typ o o 5 Typ 5 Typ (1.27) C C Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic Peak Repetitive Forward Off-State Blocking Current Peak Forward On-State Voltage Continuous DC Gate Trigger Current Continuous DC Gate Trigger Voltage DC Holding Current (Ratings at 25 C ambient temperature unless otherwise specified) Symbol TJ=25oC TJ=110oC IDRM VTM IGT VGT IH dv/dt Tgt RJC Min Typ 5.0 2.2 75 Max 10 100 1.7 200 0.8 5.0 Unit A V A V mA V/S sec o Test Conditions VAK=Rated VDRM RGK=1K ITM=0.6A Peak VAK=7V DC, RL=100 VAK=7V DC, RL=100 RGK=1K RGK=1K IGT=10mA - Critical Rate-of-Rise of Off-State Voltage Gate Controlled Turn-on Time(tD+tR) Thermal Resistance, Junction to Case C/W |
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